参数项参数值
参数项参数值
DC Current Gain hFE Max120
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO300 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max300 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage2 V
Width1.6 mm
DC Collector/Base Gain hfe Min56
MXHTS85412999
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSC-59-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
TARIC8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandROHM Semiconductor
Series2SC4061K
RoHS Details
ImageROHM Semiconductor 2SC4061KT146N
Product CategoryBipolar Transistors - BJT
Unit Weight0.000282 oz
SubcategoryTransistors
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
Part # Aliases2SC4061K
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN 300V 100MA
Moisture Sensitivity Level1 (Unlimited)