参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / Case3-XFDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C230mA (Ta)
Rds On (Max) @ Id, Vgs5.3Ohm @ 230mA, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id2.5V @ 100µA
Supplier Device PackageDFN1010-3W
Part StatusActive
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds34 pF @ 30 V
Moisture Sensitivity Level1 (Unlimited)