参数项参数值
参数项参数值
DC Current Gain hFE Max560 at - 1 mA, - 2 V
Gain Bandwidth Product fT350 MHz
Collector- Base Voltage VCBO- 20 V
Collector- Emitter Voltage VCEO Max- 20 V
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 120 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.000106 oz
BrandROHM Semiconductor
ImageROHM Semiconductor EMT51T2R
Pd - Power Dissipation150 mW
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Factory Pack Quantity8000
Part # AliasesEMT51
Product TypeBJTs - Bipolar Transistors
USHTS8541290095
DescriptionBipolar Transistors - BJT PNP+PNP Driver Transistor