参数项参数值
参数项参数值
DC Current Gain hFE Max120 at 100 mA, 2 V
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current3 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min120
Width2.5 mm
Height1.5 mm
MXHTS85412999
Length4.5 mm
KRHTS8541299000
Package / CaseSOT-89-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageROHM Semiconductor 2SC5824T100Q
TARIC8541290000
RoHS Details
Series2SC5824
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2000 mW
BrandROHM Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN 60V 3A
ManufacturerROHM Semiconductor
USHTS8541290075