参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min200
Width1.25 mm
Height0.8 mm
Length2 mm
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight0.000176 oz
RoHS Details
SeriesBC848BW
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Part # AliasesBC848BW
ImageROHM Semiconductor BC848BWT106
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN 30V 1MA
Moisture Sensitivity Level1 (Unlimited)