参数项参数值
参数项参数值
DC Current Gain hFE Max82
Peak DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current500 mA
ConfigurationSingle
Transistor PolarityNPN
MXHTS85412999
Length2 mm
Width1.25 mm
Height0.8 mm
KRHTS8541299000
DC Collector/Base Gain hfe Min82
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor DTD113ZUT106
BrandROHM Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - Pre-Biased NPN 50V 500MA
SeriesDTD113ZU
Product TypeBJTs - Bipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
SubcategoryTransistors
Unit Weight0.000988 oz
USHTS8541290095
Part # AliasesDTD113ZU
Pd - Power Dissipation200 mW
Typical Resistor Ratio10
Typical Input Resistor1 kOhms