参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz, 180 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO- 6 V, 7 V
DC Collector/Base Gain hfe Min120
Width1.2 mm
Height0.5 mm
Length1.6 mm
MXHTS85412999
KRHTS8541299000
Package / CaseEMT-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.000583 oz
SeriesEMZ1
BrandROHM Semiconductor
ImageROHM Semiconductor EMZ1T2R
ManufacturerROHM Semiconductor
Pd - Power Dissipation150 mW
Part # AliasesEMZ1
Factory Pack Quantity8000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN/PNP 50V 150MA