参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage400 mV
DC Collector/Base Gain hfe Min120
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
ImageROHM Semiconductor 2SC4081U3HZGT106R
RoHS Details
Unit Weight0.000991 oz
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation200 mW
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN 50V 0.15A 0.2W SOT-323
ManufacturerROHM Semiconductor
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)