参数项参数值
参数项参数值
DC Current Gain hFE Max820
Gain Bandwidth Product fT90 MHz
Collector- Base Voltage VCBO- 20 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 20 V
Continuous Collector Current- 2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min390
Width2.5 mm
Height1.5 mm
Length4.5 mm
MXHTS85412999
KRHTS8541299000
Package / CaseMPT-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageROHM Semiconductor 2SB1427T100E
TARIC8541290000
RoHS Details
Unit Weight0.068925 oz
Series2SB1427
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation2 W
Part # Aliases2SB1427
BrandROHM Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
DescriptionBipolar Transistors - BJT PNP 20V 2A
USHTS8541290095