参数项参数值
参数项参数值
DC Current Gain hFE Max560 at 1 mA, 6 V
Gain Bandwidth Product fT350 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage100 mV
DC Collector/Base Gain hfe Min120
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CNHTS8541290000
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.000106 oz
BrandROHM Semiconductor
RoHS Details
Factory Pack Quantity8000
ImageROHM Semiconductor EMX52T2R
Pd - Power Dissipation150 mW
Product CategoryBipolar Transistors - BJT
ManufacturerROHM Semiconductor
Part # AliasesEMX52
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
USHTS8541290095
DescriptionBipolar Transistors - BJT NPN+NPN Driver Transistor
Moisture Sensitivity Level1 (Unlimited)