参数项参数值
参数项参数值
Forward Transconductance - Min200 ms
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V, -1 V
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V, - 10 V, + 10 V
Typical Turn-On Delay Time5 ns, 6 ns
Rds On - Drain-Source Resistance1 Ohms, 1.2 Ohms
Typical Turn-Off Delay Time15 ns, 17 ns
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
ProductMOSFET Small Signal
CNHTS8541210000
CAHTS8541210000
Channel ModeEnhancement
Fall Time10 ns, 17 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
Unit Weight0.000106 oz
RoHS Details
SeriesEM6M2
Factory Pack Quantity8000
ImageROHM Semiconductor EM6M2T2R
Pd - Power Dissipation150 mW
Product CategoryMOSFET
Part # AliasesEM6M2
ManufacturerROHM Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage20 V
DescriptionMOSFET 1.2V Drive Nch+Pch MOSFET
Number of Channels2 Channel
Rise Time10 ns, 4 ns
Moisture Sensitivity Level1 (Unlimited)