参数项参数值
参数项参数值
ConfigurationDual
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type2 P-Channel
MXHTS85412999
KRHTS8541219000
Mounting StyleSMD/SMT
Qg - Gate Charge1.4 nC
Package / CaseSOT-563-6
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ProductMOSFET Small Signal
TARIC8541290000
RoHS Details
ImageROHM Semiconductor EM6J1T2R
PackagingReel
SubcategoryMOSFETs
PackagingCut Tape
PackagingMouseReel
Channel ModeEnhancement
BrandROHM Semiconductor
SeriesEM6J1
Product TypeMOSFET
Factory Pack Quantity8000
ManufacturerROHM Semiconductor
Unit Weight0.000106 oz
USHTS8541210095
Product CategoryMOSFET
DescriptionMOSFET FET Dual Pch -20V -200mA EMT6
Part # AliasesEM6J1
Pd - Power Dissipation150 mW
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel