参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual Common Emitter
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min100
Width1.2 mm
Height0.5 mm
Length1.6 mm
MXHTS85412999
KRHTS8541299000
Package / CaseEMT-5
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
SeriesEMG3
ImageROHM Semiconductor EMG3T2R
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Pd - Power Dissipation150 mW
Part # AliasesEMG3
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity8000
Product CategoryBipolar Transistors - Pre-Biased
SubcategoryTransistors
Typical Input Resistor4.7 kOhms
USHTS8541290095
DescriptionBipolar Transistors - Pre-Biased DUAL DIGITAL NPN/NPN INPUT RESISTOR