参数项参数值
参数项参数值
DC Current Gain hFE Max30
Gain Bandwidth Product fT140 MHz
Collector- Base Voltage VCBO120 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage80 mV
DC Collector/Base Gain hfe Min30
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Unit Weight1.784333 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation200 mW
ImageROHM Semiconductor BSS64AT116
Factory Pack Quantity3000
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT TRANSISTOR FOR HIGH VOLT AMP
USHTS8541210075