参数项参数值
参数项参数值
DC Current Gain hFE Max300
Peak DC Collector Current1000 mA
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current1 A
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Length4.5 mm
Width2.5 mm
Height1.5 mm
KRHTS8541109000
DC Collector/Base Gain hfe Min300
Minimum Operating Temperature- 55 C
JPHTS8541290100
Package / CaseSOT-89-3
CAHTS8541290000
CNHTS8541290000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity1000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageROHM Semiconductor DTDG14GPT100
BrandROHM Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
RoHS Details
TARIC8541290000
DescriptionBipolar Transistors - Pre-Biased DIGITAL NPN 60V 1A
SeriesDTDG14GP
Product TypeBJTs - Bipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
SubcategoryTransistors
Unit Weight0.004603 oz
USHTS8541290095
Part # AliasesDTDG14GP
Pd - Power Dissipation500 mW