参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT320 MHz, 260 MHz
Collector- Base Voltage VCBO15 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max12 V
Continuous Collector Current500 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage90 mV, - 100 mV
DC Collector/Base Gain hfe Min270
Width1.2 mm
Height0.5 mm
Length1.6 mm
Package / CaseEMT-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Unit Weight0.002734 oz
SeriesEMZ7
BrandROHM Semiconductor
ImageROHM Semiconductor EMZ7T2R
ManufacturerROHM Semiconductor
Pd - Power Dissipation150 mW
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Part # AliasesEMZ7
Factory Pack Quantity8000
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN/PNP 12V 500MA
Moisture Sensitivity Level1 (Unlimited)