参数项参数值
参数项参数值
DC Current Gain hFE Max2700
Gain Bandwidth Product fT35 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.3 A
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current300 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO25 V
Width1.6 mm
Collector-Emitter Saturation Voltage50 mV
Height1.1 mm
DC Collector/Base Gain hfe Min820
Length2.9 mm
Mounting StyleSMD/SMT
Package / CaseSMT-6
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor IMX25T110
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesIMX2
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
Unit Weight0.002339 oz
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT TRANS GP BJT NPN 20V 0.3A 6PIN
Pd - Power Dissipation300 mW
Part # AliasesIMX25