参数项参数值
参数项参数值
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 100 mA
ConfigurationDual
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
MXHTS85412999
Width1.6 mm
DC Collector/Base Gain hfe Min100
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSC-74-6
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor IMB3AT110
SeriesIMB3A
BrandROHM Semiconductor
Unit Weight0.003551 oz
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity3000
Product CategoryBipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
SubcategoryTransistors
Pd - Power Dissipation300 mW
Part # AliasesIMB3A
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
USHTS8541290095
Typical Input Resistor4.7 kOhms