参数项参数值
参数项参数值
DC Current Gain hFE Max820
Peak DC Collector Current600 mA
Collector- Emitter Voltage VCEO Max20 V
Continuous Collector Current600 mA
ConfigurationDual
Transistor PolarityNPN
Emitter- Base Voltage VEBO12 V
Width1.6 mm
Height1.1 mm
Length2.9 mm
DC Collector/Base Gain hfe Min820
Mounting StyleSMD/SMT
Package / CaseSMT-6
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
DescriptionBipolar Transistors - Pre-Biased Dual NPN 20V 600mA
BrandROHM Semiconductor
ImageROHM Semiconductor IMH23T110
Product TypeBJTs - Bipolar Transistors - Pre-Biased
SeriesIMH23
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
RoHS Details
SubcategoryTransistors
Part # AliasesIMH23
Pd - Power Dissipation300 mW
Typical Input Resistor4.7 kOhms
Moisture Sensitivity Level1 (Unlimited)