参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityN-Channel, P-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance170 mOhms, 290 mOhms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time50 ns, 75 ns
Qg - Gate Charge15 nC, 26.2 nC
Package / CaseHSOP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Fall Time14 ns, 19 ns
TARIC8541290000
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor HP8M51TB1
Product CategoryMOSFET
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
Pd - Power Dissipation7 W
DescriptionMOSFET 100 NCH+PCH POWER
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels2 Channel
Rise Time13 ns
Moisture Sensitivity Level1 (Unlimited)