参数项参数值
参数项参数值
DC Current Gain hFE Max30
Peak DC Collector Current100 mA
Continuous Collector Current- 50 mA
ConfigurationDual
Transistor PolarityPNP
Width1.6 mm
Height1.1 mm
Length2.9 mm
DC Collector/Base Gain hfe Min30
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
CNHTS8541290000
DescriptionBipolar Transistors - Pre-Biased DUAL PNP 50V 50MA SOT-457
BrandROHM Semiconductor
ImageROHM Semiconductor IMB11AT110
SeriesIMB11A
Product TypeBJTs - Bipolar Transistors - Pre-Biased
TARIC8541290000
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
RoHS Details
Unit Weight0.001235 oz
SubcategoryTransistors
Part # AliasesIMB11A
Pd - Power Dissipation300 mW
USHTS8541290095
Typical Resistor Ratio1
Typical Input Resistor10 kOhms