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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT180 Mhz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width1.6 mm
MXHTS85412999
DC Collector/Base Gain hfe Min120
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor IMX1T110
Unit Weight0.000423 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerROHM Semiconductor
Pd - Power Dissipation300 mW
DescriptionBipolar Transistors - BJT DUAL NPN 50V 150MA SOT-457
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)