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商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1.3 V
TechnologySi
Id - Continuous Drain Current27 A, 80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.6 ns, 20 ns
Rds On - Drain-Source Resistance8.8 mOhms, 3 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time25.5 ns, 59 ns
Qg - Gate Charge10 nC, 36 nC
Package / CaseHSOP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Fall Time3.4 ns, 19 ns
TARIC8541290000
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor HP8K24TB
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation22 W, 31 W
Part # AliasesHP8K24
DescriptionMOSFET 30V N-CHANNEL DUAL
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel