参数项参数值
参数项参数值
DC Current Gain hFE Max600
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationDual
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO5 V
MXHTS85412999
Width1.6 mm
DC Collector/Base Gain hfe Min100
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseSC-74-6
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor IMD6AT108
SeriesIMD6A
BrandROHM Semiconductor
Unit Weight0.001235 oz
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity3000
Product CategoryBipolar Transistors - Pre-Biased
ManufacturerROHM Semiconductor
SubcategoryTransistors
Pd - Power Dissipation300 mW
Part # AliasesIMD6A
DescriptionBipolar Transistors - Pre-Biased PNP/NPN 50V 100MA SOT-457
USHTS8541290095
Typical Input Resistor4.7 kOhms
Number of Channels2 Channel