参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT140 MHz, 180 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current0.15 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current150 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO- 6 V, 7 V
DC Collector/Base Gain hfe Min120
Width1.6 mm
Height1.1 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-25-5
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.014991 oz
SeriesFMY1
ImageROHM Semiconductor FMY1AT148
BrandROHM Semiconductor
Pd - Power Dissipation300 mW
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Part # AliasesFMY1A
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
DescriptionBipolar Transistors - BJT NPN/PNP 50V 150MA SMT5
USHTS8541290095