参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current4.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance35 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time110 ns
Qg - Gate Charge14 nC
CNHTS8541290000
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
Fall Time65 ns
TARIC8541290000
RoHS Details
BrandROHM Semiconductor
ImageROHM Semiconductor HP8M31TB1
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1.25 W
DescriptionMOSFET 60V N&P-CHANNEL
USHTS8541290095
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time35 ns