HP8KA1TB

厂牌:ROHM
包装:REEL 2500
类目:元器件 > 分立器件 > MOSFET
编号:B000044460288
描述:Nch+Nch 30V 功率MOSFET
最新价格近期成交48单+
数量价格(含税)
1¥18.0050
100¥10.6127
500¥9.5147
1000¥8.6366
2500¥7.1727
5000¥6.6604
12500¥5.7821
库存:2,500交期:5-10个工作日起订:10增量:1
数量:
X
18.0050(单价)
合计:
¥180.05
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min14 S, 14 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current14 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns, 25 ns
Width5 mm
Rds On - Drain-Source Resistance7 mOhms, 7 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time85 ns, 85 ns
Height1.1 mm
Length5.8 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge24 nC
Package / CaseHSOP-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ProductMOSFET
PackagingCut Tape
TARIC8541290000
PackagingMouseReel
PackagingReel
RoHS Details
ImageROHM Semiconductor HP8KA1TB
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time40 ns, 40 ns
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Factory Pack Quantity2500
Unit Weight0.002490 oz
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET Nch+Nch 30V Power MOSET
Pd - Power Dissipation3 W
Part # AliasesHP8KA1
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time30 ns, 30 ns
TypePower MOSFET