参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 50 V, 50 V
Maximum DC Collector Current- 6 A, 6 A
Collector- Emitter Voltage VCEO Max- 50 V, 50 V
Continuous Collector Current- 3 A, 3 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO- 6 V, 6 V
Collector-Emitter Saturation Voltage- 200 mV, 130 mV
DC Collector/Base Gain hfe Min180
Mounting StyleSMD/SMT
Package / CaseSOT-25T-5
Maximum Operating Temperature+ 150 C
TARIC8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
RoHS Details
ImageROHM Semiconductor QS5Y2FSTR
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP+NPN Driver Tran TSMT5
Pd - Power Dissipation1.25 W
Part # AliasesQS5Y2
Moisture Sensitivity Level1 (Unlimited)