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商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current9 A
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance500 MOhms
Transistor Type1 N-Channel
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge23 nC
Mounting StyleSMD/SMT
Package / CaseTO-263-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Factory Pack Quantity1000
CNHTS8541290000
BrandROHM Semiconductor
Product TypeMOSFET
DescriptionMOSFET 10V Drive Nch MOSFET
Channel ModeEnhancement
ImageROHM Semiconductor R6009ENJTL
SeriesSuper Junction-MOS EN
TARIC8541290000
ManufacturerROHM Semiconductor
Fall Time30 ns
Product CategoryMOSFET
RoHS Details
Unit Weight0.077603 oz
SubcategoryMOSFETs
Part # AliasesR6009ENJ
Pd - Power Dissipation94 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
Number of Channels1 Channel
Rise Time35 ns