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商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time8 ns
Width1.6 mm
Rds On - Drain-Source Resistance100 MOhms
Transistor Type2 N-Channel MOSFET
Height0.85 mm
Typical Turn-Off Delay Time21 ns
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge2.8 nC
Package / CaseSOT-25T-5
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
ProductMOSFET Small Signal
RoHS Details
PackagingReel
PackagingMouseReel
PackagingCut Tape
ImageROHM Semiconductor QS5K2TR
SubcategoryMOSFETs
Channel ModeEnhancement
BrandROHM Semiconductor
Fall Time8 ns
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
SeriesQS5K2
Product CategoryMOSFET
Unit Weight0.002215 oz
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET N-CHAN MOSF 30V 2A TSMT5
Part # AliasesQS5K2
Pd - Power Dissipation1.25 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time10 ns
TypeMOSFET