参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current15 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance315 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Qg - Gate Charge27.5 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time20 ns
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R6515KNJTL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity1000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation184 W
USHTS8541290095
DescriptionMOSFET 650V N-CH 15A POWER MOSFET
Vds - Drain-Source Breakdown Voltage650 V
Number of Channels1 Channel
Rise Time35 ns