参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current51 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time65 ns
Rds On - Drain-Source Resistance48 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time170 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge120 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor RCX511N25
PackagingCut Tape
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Fall Time210 ns
Factory Pack Quantity500
SeriesRCX511N25
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Unit Weight0.035274 oz
DescriptionMOSFET 10V Drive Nch MOSFET
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation84 W
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time300 ns