参数项参数值
参数项参数值
DC Current Gain hFE Max500
Gain Bandwidth Product fT270 MHz, 300 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current3 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current3 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min200
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-25T-5
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor QS5Y1TR
PackagingReel
PackagingCut Tape
PackagingMouseReel
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT Isolated DC/DC Converter
Part # AliasesQS5Y1
Pd - Power Dissipation1.25 W