参数项参数值
参数项参数值
Forward Transconductance - Min12 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current22 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance26 mOhms
Transistor Type1 N-Channel
CNHTS8541210000
Qg - Gate Charge30 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time65 ns
TARIC8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
SeriesRD3L
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RD3L220SNFRATL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity2500
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation20 W
USHTS8541290095
DescriptionMOSFET Nch 60V Vdss 22A ID TO-252(DPAK); TO-252
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time45 ns