参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT320 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max30 V
Continuous Collector Current1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Width1.6 mm
Collector-Emitter Saturation Voltage120 mV
Height1.1 mm
DC Collector/Base Gain hfe Min270
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSMT-6
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor QSX8TR
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesQSX8
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT TRANS GP BJT NPN 30V 1A 6PIN
Part # AliasesQSX8
Pd - Power Dissipation1.25 W