参数项参数值
参数项参数值
Forward Transconductance - Min0.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
QualificationAEC-Q101
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance4.3 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Qg - Gate Charge13 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
PackagingMouseReel
PackagingReel
PackagingCut Tape
Channel ModeEnhancement
SubcategoryMOSFETs
BrandROHM Semiconductor
Fall Time70 ns
ManufacturerROHM Semiconductor
Product CategoryMOSFET
Factory Pack Quantity1000
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET Nch 800V Vdss 2A ID TO-263(D2PAK); LPTS
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time25 ns