参数项参数值
参数项参数值
DC Current Gain hFE Max680
Gain Bandwidth Product fT280 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max30 V
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
DC Collector/Base Gain hfe Min270
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-25-5
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
RoHS Details
ImageROHM Semiconductor QSZ4TR
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
SeriesQSZ4
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT ISO TRANSISTORDIODE GEN PURP
Part # AliasesQSZ4
Pd - Power Dissipation500 mW