RQ3E080GNTB

厂牌：ROHM

包装：REEL 3000

类目：元器件 > 分立器件 > MOSFET

编号：B000044471012

描述：MOSFET N-CH 30V 18A HSMT-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0129ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:14W; Transistor Case Style:HSMT; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

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商品参数

参数项参数值

Forward Transconductance - Min7 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2.5 V

TechnologySi

Id - Continuous Drain Current8 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time6.9 ns

Rds On - Drain-Source Resistance16.7 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time17.3 ns

MXHTS85412999

KRHTS8541299000

JPHTS8541290100

CAHTS8541290000

Mounting StyleSMD/SMT

Package / CaseHSMT-8

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 150 C

CNHTS8541290000

TARIC8541290000

PackagingCut Tape

PackagingMouseReel

PackagingReel

RoHS Details

Channel ModeEnhancement

Fall Time2.4 ns

Factory Pack Quantity3000

SubcategoryMOSFETs

Product CategoryMOSFET

BrandROHM Semiconductor

Product TypeMOSFET

DescriptionMOSFET 4.5V Drive Nch MOSFET

ManufacturerROHM Semiconductor

USHTS8541290095

Part # AliasesRQ3E080GN

Pd - Power Dissipation2 W

Vds - Drain-Source Breakdown Voltage30 V

Number of Channels1 Channel

Rise Time3.6 ns

Moisture Sensitivity Level1 (Unlimited)