参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage7 V
TechnologySi
Id - Continuous Drain Current30 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time37 ns
Rds On - Drain-Source Resistance143 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time70 ns
Qg - Gate Charge74 nC
Package / CaseTO-220FM-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Fall Time25 ns
TARIC8541290000
RoHS Details
Series123
BrandROHM Semiconductor
ImageROHM Semiconductor R6030JNXC7G
Product TypeMOSFET
Factory Pack Quantity50
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Pd - Power Dissipation95 W
DescriptionMOSFET 600V Vdss; 95W Pd PrestoMOS; 30A
USHTS8541290095
Vds - Drain-Source Breakdown Voltage600 V
TradenamePrestoMOS
Number of Channels1 Channel
Rise Time26 ns