参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current65 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance9.1 mOhms
MXHTS85412999
Qg - Gate Charge260 nC
KRHTS8541299000
Package / CaseTO-263-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.068654 oz
SeriesRSJ650N10
ImageROHM Semiconductor RSJ650N10TL
BrandROHM Semiconductor
Pd - Power Dissipation100 W
Factory Pack Quantity1000
Product TypeMOSFET
Part # AliasesRSJ650N10
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET 4V Drive Nch MOSFET
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
Number of Channels1 Channel