参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current7.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time7 ns
Rds On - Drain-Source Resistance17 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time35 ns
Qg - Gate Charge6.8 nC
Package / CaseTSMT-8
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
PackagingCut Tape
PackagingReel
RoHS Details
ImageROHM Semiconductor RQ1E075XNTCR
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time7 ns
BrandROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
DescriptionMOSFET 4V N-CHANNEL DRIVE
ManufacturerROHM Semiconductor
USHTS8541290095
Part # AliasesRQ1E075XN
Pd - Power Dissipation1.5 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time25 ns