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商品参数
参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance325 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time30 ns
Mounting StyleSMD/SMT
Package / CaseTSMT-8
Qg - Gate Charge4.7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
PackagingCut Tape
PackagingReel
ImageROHM Semiconductor QH8K51TR
RoHS Details
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time15 ns
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product CategoryMOSFET
Factory Pack Quantity3000
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET 100V NCH+NCH SMALL SIGNAL
Pd - Power Dissipation1.5 W
Part # AliasesQH8K51
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels2 Channel
Rise Time10 ns