参数项参数值
参数项参数值
Forward Transconductance - Min5 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.3 V
TechnologySi
Id - Continuous Drain Current4 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
QualificationAEC-Q101
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance35 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
Qg - Gate Charge8 nC
Package / CaseSC-96-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
Product CategoryMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1 W
USHTS8541290095
DescriptionMOSFET 20V N-CHANNEL 4A
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time30 ns