RZM001P02T2L

厂牌:ROHM
包装:REEL 8000
类目:元器件 > 分立器件 > MOSFET
编号:B000044471309
描述:Small Signal Field-Effect Transistor, 0.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
最新价格近期成交41单+
数量价格(含税)
1¥1.0246
100¥0.6588
500¥0.5856
1000¥0.5123
8000¥0.4392
16000¥0.4392
40000¥0.3660
库存:8,000交期:5-10个工作日起订:10增量:1
数量:
X
1.0246(单价)
合计:
¥10.25
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min120 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 1 V
TechnologySi
Id - Continuous Drain Current100 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 10 V, + 10 V
Typical Turn-On Delay Time46 ns
Rds On - Drain-Source Resistance3.8 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time325 ns
Width0.9 mm
Height0.55 mm
Length1.3 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
Package / CaseSOT-723-3
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
ProductMOSFET
CNHTS8541290000
Fall Time137 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
RoHS Details
ImageROHM Semiconductor RZM001P02T2L
Unit Weight0.000282 oz
Factory Pack Quantity8000
SeriesRZM001P02
BrandROHM Semiconductor
Pd - Power Dissipation150 mW
Product TypeMOSFET
Part # AliasesRZM001P02
Product CategoryMOSFET
ManufacturerROHM Semiconductor
SubcategoryMOSFETs
DescriptionMOSFET 1.2V Drive Pch MOSFET
Vds - Drain-Source Breakdown Voltage20 V
USHTS8541290095
Number of Channels1 Channel
Rise Time62 ns
TypeSmall Signal MOSFET
Moisture Sensitivity Level1 (Unlimited)