参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current2.5 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time7 ns
Rds On - Drain-Source Resistance55 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time50 ns
MXHTS85423201
CNHTS8541290000
Qg - Gate Charge12 nC
Package / CaseTUMT-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8542320040
Channel ModeEnhancement
Fall Time33 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RRL025P03FRATR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation1 W
Part # AliasesRRL025P03FRA
USHTS8542320051
DescriptionMOSFET Pch -30V Vds -2.5A 0.095Rds(on) 5.2Qg
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time16 ns