参数项参数值
参数项参数值
Forward Transconductance - Min1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
QualificationAEC-Q101
Typical Turn-On Delay Time25 ns
Rds On - Drain-Source Resistance2.1 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time50 ns
CNHTS8541210000
Qg - Gate Charge20 nC
Package / CaseTO-263-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time27 ns
TARIC8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor R8005ANJFRGTL
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity1000
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation120 W
USHTS8541290095
DescriptionMOSFET Nch 800V Vdss 5A ID TO-263(D2PAK); LPTS
Vds - Drain-Source Breakdown Voltage800 V
Number of Channels1 Channel
Rise Time30 ns
Moisture Sensitivity Level1 (Unlimited)