参数项参数值
参数项参数值
DC Current Gain hFE Max450 at 50 mA, 2 V, 450 at - 50 mA, - 2 V
Gain Bandwidth Product fT360 MHz, 400 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1 A, - 1 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current1 A, - 1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage130 mV, - 200 mV
DC Collector/Base Gain hfe Min180 at 50 mA, 2 V, 180 at - 50 mA, - 2 V
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-457T-6
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
ImageROHM Semiconductor QS6Z5TR
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryTransistors
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
USHTS8541290095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT PNP+NPN Driver Transistor
Part # AliasesQS6Z5
Pd - Power Dissipation1.25 W