参数项参数值
参数项参数值
Forward Transconductance - Min7 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9.8 ns
Rds On - Drain-Source Resistance17.4 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time58 ns
MXHTS85412999
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge21 nC
Package / CaseHSMT-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time27 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ3E075ATTB
Product CategoryMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation15 W
Part # AliasesRQ3E075AT
USHTS8541290095
DescriptionMOSFET Pch -30V -18A Si MOSFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time9.2 ns