参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min4.4 S
Vgs th - Gate-Source Threshold Voltage2.7 V
TechnologySiC
ImageROHM Semiconductor SCT3080KLHRC11
Transistor PolarityN-Channel
Id - Continuous Drain Current31 A
DescriptionMOSFET 1200V 31A 165W SIC 80mOhm TO-247N
Minimum Operating Temperature- 55 C
Vgs - Gate-Source Voltage- 4 V, + 22 V
QualificationAEC-Q101
Typical Turn-On Delay Time15 ns
PackagingTube
Rds On - Drain-Source Resistance80 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
Package / CaseTO-247-3
Product CategoryMOSFET
Maximum Operating Temperature+ 175 C
Factory Pack Quantity30
Mounting StyleThrough Hole
Product TypeMOSFET
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
RoHS Details
TARIC8541290000
Qg - Gate Charge60 nC
SeriesSCT3x
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541290095
Fall Time24 ns
Pd - Power Dissipation165 W
Vds - Drain-Source Breakdown Voltage1200 V
Number of Channels1 Channel
Rise Time22 ns