参数项参数值
参数项参数值
Forward Transconductance - Min3.5 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time11 ns
Rds On - Drain-Source Resistance180 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time160 ns
Width1.8 mm
Height0.95 mm
Length3 mm
MXHTS85412999
Qg - Gate Charge16 nC
KRHTS8541299000
Package / CaseSOT-346-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
ProductMOSFET
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.000423 oz
ImageROHM Semiconductor RQ5A030APTL
BrandROHM Semiconductor
Pd - Power Dissipation1 W
Factory Pack Quantity3000
Product TypeMOSFET
Part # AliasesRQ5A030AP
ManufacturerROHM Semiconductor
Product CategoryMOSFET
SubcategoryMOSFETs
DescriptionMOSFET Pch -12V -3A Middle Power MOSFET
Vds - Drain-Source Breakdown Voltage12 V
USHTS8541290095
Number of Channels1 Channel
Rise Time40 ns
TypePower MOSFET